Epitaxial GaN1-yAsy layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy
Paulson, Charles A.
Kuech, Thomas F.
American Institute of Physics Inc
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The following article appeared in Kimura, A., Paulson, C.A., Tang, H.F., & Kuech, T.F. (2004). Epitaxial Ga N1 Y Asy Layers With High As Content Grown By Metalorganic Vapor Phase Epitaxy And Their Band Gap Energy. Applied Physics Letters, 84(9), 1489-1491. and may be found at http://link.aip.org/link/?apl/84/1489