| dc.contributor.author | Lin, Chingfu | en_US |
| dc.contributor.author | Chang, Y. Austin | en_US |
| dc.contributor.author | Pan, Noran | en_US |
| dc.contributor.author | Huang, Jen-Wu | en_US |
| dc.contributor.author | Kuech, Thomas F. | en_US |
| dc.date.accessioned | 2007-07-13T19:28:22Z | |
| dc.date.available | 2007-07-13T19:28:22Z | |
| dc.date.issued | 1995 | en_US |
| dc.identifier.citation | The following article appeared in Lin, C.-F., Chang, Y.A., Pan, N., Huang, J.-W., & Kuech, T.F. (1995). Pd Al Schottky Contact To In0.52 Al0.48 As Grown By Metalorganic Chemical Vapor Deposition. Applied Physics Letters, 67(24), 3587-9. and may be found at http://link.aip.org/link/?apl/67/3587 | en_US |
| dc.identifier.uri | http://digital.library.wisc.edu/1793/10452 | |
| dc.description | This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. | en_US |
| dc.format.extent | 74799 bytes | |
| dc.format.mimetype | application/pdf | en_US |
| dc.format.mimetype | application/pdf | |
| dc.publisher | American Institute of Physics | en_US |
| dc.relation.ispartof | http://www.aip.org | en_US |
| dc.relation.ispartof | http://apl.aip.org/ | en_US |
| dc.rights | Copyright 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | en_US |
| dc.title | PdAl Schottky contact to In0.52Al0.48As grown by metalorganic chemical vapor deposition | en_US |
| dc.identifier.doi | http://dx.doi.org/10.1063/1.115326 | en_US |
