Plasma-parameter dependence of thin-oxide damage from wafer charging during electron-cyclotron-resonance plasma processing
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Date
1997Author
Friedmann, James B.
Shohet, J. Leon
Mau, Robert
Hershkowitz, Noah
Bisgaard, Soren
Ma, Shawming
McVittie, James P.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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http://digital.library.wisc.edu/1793/10408Description
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Citation
Friedmann, J.B., Shohet, J.L., Mau, R., Hershkowitz, N., Bisgaard, S., Ma, S.M., et al. (1997). Plasma Parameter Dependence Of Thin Oxide Damage From Wafer Charging During Electron Cyclotron Resonance Plasma Processing. Ieee Transactions On Semiconductor Manufacturing, 10(1), 154-166.