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dc.contributor.authorShohet, J. Leonen_US
dc.contributor.authorNauka, Krysztofen_US
dc.contributor.authorRissman, Paulen_US
dc.date.accessioned2007-07-13T19:27:53Z
dc.date.available2007-07-13T19:27:53Z
dc.date.issued1996en_US
dc.identifier.citationShohet, J.L., Nauka, K., & Rissman, P. (1996). Deposited Charge Measurements On Silicon Wafers After Plasma Treatment. Ieee Transactions On Plasma Science, 24(1), 75-76.en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/10388
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent236325 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherIEEE, Piscataway, NJ, USAen_US
dc.relation.ispartofhttp://www.ieee.org/en_US
dc.relation.ispartofhttp://ieeexplore.ieee.org/servlet/opac?punumber=27en_US
dc.rightsCopyright 1996 Institute of Electrical and Electronics Engineersen_US
dc.rights©20xx IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_US
dc.titleDeposited charge measurements on silicon wafers after plasma treatmenten_US
dc.identifier.doihttp://dx.doi.org/10.1109/27.491698en_US


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