Browsing by Author "Ma, Zhenqiang"
Now showing items 1-5 of 5
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An 18-GHz 300-mW SiGe power HBT
Ma, Zhenqiang; Jiang, Ningyue; Wang, Guogong; Alterovitz, Samuel A. (Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United States, 2005) -
Base-region optimization of SiGe HBTs for high-frequency microwave power amplification
Ma, Zhenqiang; Jiang, Ningyue (Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United States, 2006) -
Experimental Verification of Role of Ballast Resistors in SiGe Power HBTs
Yang, Yuanyuan (2011-05-15)To prevent the dramatic degradation of the device performance of SiGe power heterojunction bipolar transistors (HBTs) and maintain the power efficiency, emitter-ballast resistors and base-ballast resistors have been employed ... -
On the operation configuration of SiGe HBTs based on power gain analysis
Ma, Zhenqiang; Jiang, Ningyue (Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United States, 2005) -
Ultrahigh-performance 8-GHz SiGe power HBT
Wang, Guogong; Yuan, Hao-Chih; Ma, Zhenqiang (Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United States, 2006)