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Showing 9-28 of 39

Distributed-feedback grating used as an array-mode selector in resonant antiguided diode laser arrays: Effects of the mirror facet position with respect to the grating

Nesnidal, Michael P.; Mawst, Luke J.; Botez, Dan; Buus, Jens (Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, USA; 1998)
Experimental test for elastic compliance during growth on glass-bonded compliant substrates

Moran, Peter D.; Hansen, Darren Michael; Matyi, Richard J.; Mawst, Luke J.; Kuech, Thomas F. (American Institute of Physics Inc; 2000)
Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm

Tansu, Nelson; Yeh, Jeng-Ya; Mawst, Luke J. (American Institute of Physics Inc; 2003)
High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: effect of substrate misorientation

Mawst, Luke J.; Bhattacharya, Arnab; Nesnidal, Michael P.; Lopez, James; Botez, Dan; Morris, Jeffrey A.; Zory, Peter S. (American Inst of Physics, Woodbury, NY, USA; 1995)
High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers

Wade, Jerome K.; Mawst, Luke J.; Botez, Dan; Jansen, Mitch; Fang, Fang; Nabiev, Rashit F. (American Inst of Physics, Woodbury, NY, USA; 1997)
High peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor deposition

Mirabedini, Ali R.; Mawst, Luke J.; Botez, Dan; Marsland, Robert A. (American Institute of Physics; 1997)
High-performance, reliable, 730-nm-emitting Al-free active region diode lasers

Al-Muhanna, Ali; Wade, Jerome K.; Earles, Thomas L.; Lopez, James; Mawst, Luke J. (American Institute of Physics Inc., Woodbury, NY, USA; 1998)
High-performance strain-compensated InGaAs-GaAsP-GaAs (λ = 1.17 μm) quantum-well diode lasers

Tansu, Nelson; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc; 2001)
High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers

Al-Muhanna, Ali; Mawst, Luke J.; Botez, Dan; Garbuzov, Dmitri Z.; Martinelli, Ramon U.; Connolly, John C. (American Institute of Physics; 1998)
High-power single-mode antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers

Zhou, Delai; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc; 2002)
High-power single-mode simplified antiresonant reflecting optical waveguide (S-ARROW) distributed feedback semiconductor lasers

Yang, Howard; Nesnidal, Michael P.; Al-Muhanna, Ali; Mawst, Luke J.; Botez, Dan; Vang, Timothy A.; Alvarez, Fernando D.; Johnson, Roosevelt (IEEE, Piscataway, NJ, USA; 1998)
Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing

Tansu, Nelson; Yeh, Jeng-Ya; Mawst, Luke J. (American Institute of Physics Inc; 2003)
InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality

Moran, Peter D.; Hansen, Darren Michael; Matyi, Richard J.; Cederberg, Jeffrey G.; Mawst, Luke J.; Kuech, Thomas F. (American Institute of Physics Inc; 1999)
Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

Bhattacharya, Arnab; Mawst, Luke J.; Nayak, Sabyasachi; Li, Jiaying; Kuech, Thomas F. (American Inst of Physics, Woodbury, NY, USA; 1996)
Long wavelength emission of InGaAsNGaAsSb type II "w" quantum wells

Yeh, Jeng-Ya; Mawst, Luke J.; Khandekar, Anish A.; Kuech, Thomas F.; Vurgaftman, Igor; Meyer, Jerry R.; Tansu, Nelson (American Institute of Physics Inc., Melville, NY 11747-4502, United States; 2006)
Low-temperature sensitive, compressively strained InGaAsP active (λ = 0.78-0.85 µm) region diode lasers

Tansu, Nelson; Zhou, Delai; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, USA; 2000)
Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

Tansu, Nelson; Kirsch, Nicholas J.; Mawst, Luke J. (American Institute of Physics; 30)
Low-threshold strain-compensated InGaAs(N) (λ = 1.19-1.31 μm) quantum-well lasers

Tansu, Nelson; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc; 2002)
Modal characteristics of ARROW-type vertical-cavity surface-emitting lasers

Lee, Tae-Woo; Hagness, Susan C.; Zhou, Delai; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc; 2001)
Modal properties of two-dimensional antiguided vertical-cavity surface-emitting laser arrays

Zhou, Delai; Dai, Zheng; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc; 2002)

Showing 9-28 of 39

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