Browsing by Author "Kuech, Thomas F."
Now showing items 27-46 of 50
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n-GaN surface treatments for metal contacts studied via X-ray photoemission spectroscopy
Rickert, Kimberly Anne; Ellis, Arthur B.; Himpsel, Franz J.; Sun, Jingxi; Kuech, Thomas F. (American Institute of Physics, 2002) -
Near-field scanning optical microscopy investigation of immiscibility effects in In1-xGaxP films grown by liquid phase epitaxy
Paulson, Charles A.; Ellis, Arthur B.; Moran, Peter D.; Kuech, Thomas F. (American Institute of Physics, 2002) -
A near-field scanning optical microscopy study of the photoluminescence from GaN films
Liu, Jutong; Perkins, Nathan R.; Horton, M.N.; Redwing, Joan M.; Tischler, Michael A.; Kuech, Thomas F. (American Institute of Physics, 1996) -
A near-field scanning optical microscopy study of the uniformity of GaAs surface passivation
Liu, Jutong; Kuech, Thomas F. (American Institute of Physics, 1996) -
Ohmic contacts to n-GaN using PtIn2
Ingerly, Douglas B.; Chang, Y. Austin; Perkins, Nathan R.; Kuech, Thomas F. (American Institute of Physics, 1997) -
Oriented crystallization of GaSb on a patterned, amorphous Si substrate
Yi, Sungsoo; Moran, Peter D.; Zhang, Xueyuan; Cerrina, Francesco; Carter, James M.; Smith, Henry I.; Kuech, Thomas F. (American Institute of Physics, 2001) -
Oxygen-based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide
Huang, Jen-Wu; Kuech, Thomas F.; Anderson, Timothy J. (1995) -
Oxygen-related defects in low phosphorous content GaAs1-yPy grown by metal organic vapor phase epitaxy
Cederberg, Jeffrey G.; Bray, Kevin L.; Kuech, Thomas F. (American Institute of Physics, 1) -
PdAl Schottky contact to In0.52Al0.48As grown by metalorganic chemical vapor deposition
Lin, Chingfu; Chang, Y. Austin; Pan, Noran; Huang, Jen-Wu; Kuech, Thomas F. (American Institute of Physics, 1995) -
Photoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxy
Ma, Jian; Garni, Bradley J.; Perkins, Nathan R.; O'Brien, William L.; Kuech, Thomas F.; Lagally, Max G. (American Institute of Physics, 1996) -
Photoluminescence and free carrier interactions in erbium-doped GaAs
Culp, Thomas D.; Cederberg, Jeffrey G.; Bieg, Bohdan; Kuech, Thomas F.; Bray, Kevin L.; Pfeiffer, Douglas R.; Winter, Charles H. (American Institute of Physics, 1998) -
Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy
Zhang, Rong; Kuech, Thomas F. (American Institute of Physics, 1998) -
Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er
Kuech, Thomas F.; Perkins, Nathan R.; Bray, Kevin L.; Zhang, Ling; Safvi, Syed A.; Hansen, Darren Michael; Zhang, Rong (American Institute of Physics, 1998) -
Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure
Culp, Thomas D.; Hommerich, Uwe; Redwing, Joan M.; Kuech, Thomas F.; Bray, Kevin L. (American Institute of Physics, 1997) -
Photoluminescence studies on Al and Ga interdiffusion across (Al,Ga)Sb/GaSb quantum well interfaces
Gonzalez-Debs, Mariam; Cederberg, Jeffrey G.; Biefeld, Robert M.; Kuech, Thomas F. (American Institute of Physics, 2005) -
Recent advances in metal-organic vapor phase epitaxy
Kuech, Thomas F. (1992) -
Scanning tunneling microscopy and tunneling luminescence of the surface of GaN films grown by vapor phase epitaxy
Garni, Bradley J.; Ma, Jian; Perkins, Nathan R.; Liu, Jutong; Kuech, Thomas F.; Lagally, Max G. (American Inst of Physics, Woodbury, NY, USA, 1996) -
Schottky barrier enhancement using reacted Ni2Al3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs, and NiAl/Al/Ni/n-GaAs contacts
Chen, Charlie Chung-Ping; Chang, Y. Austin; Kuech, Thomas F. (1995) -
Schottky enhancement of reacted NiAl/n-GaAs contacts
Chen, Charlie Chung-Ping; Chang, Y. Austin; Kuech, Thomas F. (1994) -
SiGe relaxation on silicon-on-insulator substrates: an experimental and modeling study
Rehder, Eric M.; Inoki, Carlos Kazuo; Kuan, Tung-Sheng; Kuech, Thomas F. (American Institute of Physics, 2003)