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730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells

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Author(s)
Al-Muhanna, Ali; Wade, Jerome K.; Mawst, Luke J.; Fu, Richard J.
Publisher
Am Inst Phys, Woodbury, NY, USA
Citation
The following article appeared in A.M.A., Wade, J.K., Mawst, L.J., & Fu, R.J. (1998). 730 Nm Emitting Al Free Active Region Diode Lasers With Compressively Strained In Ga As P Quantum Wells. Applied Physics Letters, 72(6), 641-643. and may be found at http://link.aip.org/link/?apl/72/641
Date
1998
Part of
http://www.aip.org; http://apl.aip.org/
Description
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
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http://digital.library.wisc.edu/1793/9654 
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