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Low-energy separation by implantation of oxygen structures via plasma source ion implantation

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Author(s)
Goeckner, Matthew J.; Turner, J.E.; Dallmann, Douglas Alan; Kruger, James B.; Shenai, Krishna; Speth, Robert R.; Booske, John H.; Rissman, Paul; Meyyappan, Nara; Lee, S.; Perez-Albuerne, Evelio A.; Zhang, L.; Shohet, J. Leon
Citation
The following article appeared in Zhang, L., Shohet, J.L., Dallmann, D., Booske, J.H., Speth, R.R., Shenai, K., et al. (1994). Low Energy Separation By Implantation Of Oxygen Structures Via Plasma Source Ion Implantation. Applied Physics Letters, 65(8), 962-4. and may be found at http://link.aip.org/link/?apl/65/962
Date
1994
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http://apl.aip.org/; http://www.aip.org
Description
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
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