Symmetric rate model for fluorocarbon plasma etching of SiO2
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Date
1996Author
Ding, Ji
Hershkowitz, Noah
Publisher
American Institute of Physics
Metadata
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http://digital.library.wisc.edu/1793/8698Description
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Citation
The following article appeared in Ji Ding, & Hershkowitz, N. (1996). Symmetric Rate Model For Fluorocarbon Plasma Etching Of Si O2. Applied Physics Letters, 68(12), 1619-21. and may be found at http://link.aip.org/link/?apl/68/1619