Evidence from atomistic simulations of fluctuation electron microscopy for preferred local orientations in amorphous silicon

File(s):

Author(s): Khare, S. V.; Nahkmanson, S. M.; Voyles, P. M.; Keblinski, P.; Abelson, J. R.
Citation: Applied Physics Letters 85, 745 (2004)
Date: Aug 2004
Subject(s): fluctuation electron microscopy; medium range order; amorphous silicon
Abstract: Simulations from a family of atomistic structural models for unhydrogenated amorphous silicon suggest that fluctuation electron microscopy experiments have observed orientational order of paracrystalline grains in amorphous silicon. This order may consist of correlations in the orientation of nearby paracrystalline grains or anisotropy in the grain shape. This observation makes a natural connection to the known growth modes of microcrystalline silicon and may be useful for other materials systems.
Permanent link: http://digital.library.wisc.edu/1793/63504
Export: Export to RefWorks