dc.contributor.author | Ho, M.-Y. | |
dc.contributor.author | Gong, H. | |
dc.contributor.author | Wilk, G. D. | |
dc.contributor.author | Busch, B. W. | |
dc.contributor.author | Green, M. L. | |
dc.contributor.author | Voyles, P. M. | |
dc.contributor.author | Muller, D. A. | |
dc.contributor.author | Bude, M. | |
dc.contributor.author | Lin, W. H. | |
dc.contributor.author | See, A. | |
dc.contributor.author | Loomans, M. E. | |
dc.contributor.author | Lahiri, S. K. | |
dc.contributor.author | Raisanen, Petri I. | |
dc.date.accessioned | 2012-12-01T19:41:51Z | |
dc.date.available | 2012-12-01T19:41:51Z | |
dc.date.issued | 2003-02 | |
dc.identifier.citation | Journal of Applied Physics 93, 1477 (2003) | en |
dc.identifier.uri | http://digital.library.wisc.edu/1793/63502 | |
dc.description.abstract | We report the effects of annealing on the morphology and crystallization kinetics for the high-k gate dielectric replacement candidate hafnium oxide (HfO2). HfO2 films were grown by atomic layer deposition (ALD) on thermal and chemical SiO2 underlayers. High-sensitivity x-ray diffractometry shows that the as-deposited ALD HfO2 films on thermal oxide are polycrystalline, containing both monoclinic and either tetragonal or orthorhombic phases with an average grain size of ~8.0 nm. Transmission electron microscopy shows a columnar grain structure. The monoclinic phase predominates as the annealing temperature and time increase, with the grain size reaching ~11.0 nm after annealing at 900 �C for 24 h. The crystallized fraction of the film has a strong dependence on annealing temperature but not annealing time, indicating thermally activated grain growth. As-deposited ALD HfO2 films on chemical oxide underlayers are amorphous, but show strong signatures of ordering at a subnanometer level in Z-contrast scanning transmission electron
microscopy and fluctuation electron microscopy. These films show the same crystallization kinetics
as the films on thermal oxide upon annealing. | en |
dc.subject | fluctuation electron microscopy | en |
dc.subject | gate dielectric | en |
dc.subject | HfO2 | en |
dc.title | Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition | en |
dc.type | Article | en |