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Author(s)

Gibson, J. M.; Treacy, M. M. J.; Voyles, P. M.; Jin, H-C.; Abelson, J. R.

Citation

Applied Physics Letters 73, 3093 (1998)

Date

1998

Subject(s)

amorphous silicon; medium range order; fluctuation electron microscopy

Abstract

We show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are associated with instability in the as-deposited material. We suggest that improved immunity to Staebler?Wronski degradation could be achieved by a less-ordered material which is closer to the ideal continuous random network.

Description

http://dx.doi.org/10.1063/1.122683

Permanent link

http://digital.library.wisc.edu/1793/63392 

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Publications--Materials Science and Engineering

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