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Structural disorder induced in hydrogenated amorphous silicon by light soaking

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Author(s)
Gibson, J. M.; Treacy, M. M. J.; Voyles, P. M.; Jin, H-C.; Abelson, J. R.
Citation
Applied Physics Letters 73, 3093 (1998)
Date
1998
Subject(s)
amorphous silicon; medium range order; fluctuation electron microscopy
Abstract
We show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are associated with instability in the as-deposited material. We suggest that improved immunity to Staebler?Wronski degradation could be achieved by a less-ordered material which is closer to the ideal continuous random network.
Description
http://dx.doi.org/10.1063/1.122683
Permanent link
http://digital.library.wisc.edu/1793/63392 
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