Publications--Materials Science and Engineering
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Expitaxial growth and magnetic propreties of Fe3O4 flims on TiN buffered Si(001), Si(110), and Si(111) substrates
(2010)Epitaxial Fe3O4 thin films were grown on TiN buffered Si (001) , Si( 110) , and Si( 111) substrates by dc reactive sputtering deposition. Both Fe3O4 films and TiN buffer are fully epitaxial when grown at substrate ... -
Structure and physical properties of paracrystalline atomistic models of amorphous silicon
(2001)We have examined the structure and physical properties of paracrystalline molecular dynamics models of amorphous silicon. Simulations from these models show qualitative agreement with the results of recent mesoscale ... -
Aluminum nanoscale order in amorphous Al92Sm8 measured by fluctuation electron microscopy
(2005)Fluctuation electron microscopy sFEMd measurements and simulations have identified nanoscale aluminum-like medium-range order in rapidly quenched amorphous Al92Sm8 which devitrifies by primary Al crystallization. Al92Sm8 ... -
Structural, optical, and magnetic characterization of monodisperse Fe-doped ZnO nanocrystals
(2008)The results on the synthesis and characterization of highly monodisperse Fe-doped ZnO nanocrystals are presented. Stable suspensions of these materials were produced in an ethanol solution at room temperature. To promote ... -
Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy
(2012)We report microstructural characterization of heavily Ga-doped ZnO (GZO) thin films on GaN and sapphire by aberration-corrected scanning transmission electron microscopy. Growth under oxygen-rich and metal-rich growth ... -
Evaluation of connectivity, flux pinning, and upper critical field contributions to the critical current density of bulk pure and SiC-alloyed MgB2
(2006)Measurement of critical current density Jc, normal state resistivity rho_n, and upper critical field Hc2 on pure and 10% SiC-doped MgB2 bulks show systematic enhancement of Hc2 by SiC addition and by lowering reaction ... -
Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy
(2012)We report on the mechanisms governing electron transport using a comprehensive set of ZnO layers heavily doped with Ga (GZO) grown by plasma-enhanced molecular-beam epitaxy on a-plane sapphire substrates with varying ... -
Donor behavior of Sb in ZnO
(2012)Electrical behavior of Sb in ZnO:Sb layers doped in a wide concentration range was studied using temperature dependent Hall effect measurements. The layers were grown by plasma-enhanced molecular beam epitaxy, and the Sb ... -
Evidence from atomistic simulations of fluctuation electron microscopy for preferred local orientations in amorphous silicon
(2004-08)Simulations from a family of atomistic structural models for unhydrogenated amorphous silicon suggest that fluctuation electron microscopy experiments have observed orientational order of paracrystalline grains in amorphous ... -
Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition
(2003-02)We report the effects of annealing on the morphology and crystallization kinetics for the high-k gate dielectric replacement candidate hafnium oxide (HfO2). HfO2 films were grown by atomic layer deposition (ALD) on thermal ... -
Structural disorder induced in hydrogenated amorphous silicon by light soaking
(1998)We show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are associated with ... -
Increasing medium-range order in amorphous silicon with low-energy ion bombardment
(2003)We have observed the existence of medium?range order in amorphous silicon with the fluctuation electron microscopy technique. We hypothesize that this structure is produced during the highly nonequilibrium deposition ... -
High-Jc MgB2 Josephson junctions with operating temperature up to 40 K
(2010)Sandwich-type MgB2 /MgO/MgB2 Josephson junctions with Au or MgB2 interconnection were fabricated using hybrid physical-chemical vapor deposited MgB2 thin films and RF-magnetron-sputtered MgO barrier. The junctions show ... -
Tuning of magnetic properties in cobalt ferrite nanocrystals
(2008)Cobalt ferrite CoFe2O4 possesses excellent chemical stability, good mechanical hardness, and a large positive first order crystalline anisotropy constant, making it a promising candidate for magneto-optical recording ... -
Nanoscale Structure and Relaxation in Zr50Cu45Al5 Bulk Metallic Glass
(2012-05-11)Hybrid reverse Monte Carlo simulations of the structure of Zr50Cu45Al5 bulk metallic glass incorporating medium-range structure from fluctuation electron microscopy data and short-range structure from an embedded atom ...