Now showing items 1-2 of 2

    • Surface Roughness Scattering of Electrons in Bulk MOSFETS 

      Zuverink, Amanda (2015-12-18)
      Surface-roughness scattering of electrons at the Si-SiO2 interface is a very important consideration when analyzing Si metal-oxide semiconductor eld-e ect transistors(MOSFETs). Scattering reduces the mobility of the ...
    • Thermoelectric Properties of Ultrascaled GaN Nanowires 

      Davoody, Amirhossein (2011-12-15)
      In recent years, there have been a number of studies done on gallium nitride (GaN) because of its promising electronic and thermal properties. Its characteristic features are a wide bandgap, high electron mobility, and ...