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dc.contributor.authorDou, Shi Xueen_US
dc.contributor.authorBraccini, Valeriaen_US
dc.contributor.authorSoltanian, Saieden_US
dc.contributor.authorKlie, Robert F.en_US
dc.contributor.authorZhu, Yimeien_US
dc.contributor.authorLi, Shuangen_US
dc.contributor.authorWang, Xiaolinen_US
dc.contributor.authorLarbalestier, David C.en_US
dc.date.accessioned2007-07-13T19:33:36Z
dc.date.available2007-07-13T19:33:36Z
dc.date.issued2004en_US
dc.identifier.citationThe following article appeared in Dou, S.X., Braccini, V., Soltanian, S., Klie, R., Zhu, Y., Li, S., et al. (2004). Nanoscale Si C Doping For Enhancing Jc And Hc2 In Superconducting Mg B2. Journal Of Applied Physics, 96(12), 7549-7555. and may be found at http://link.aip.org/link/?jap/96/7549en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/11140
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent675003 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://jap.aip.orgen_US
dc.rightsCopyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleNanoscale-SiC doping for enhancing Jc and Hc2 in superconducting MgB2en_US


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