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InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality

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Author(s)
Moran, Peter D.; Hansen, Darren Michael; Matyi, Richard J.; Cederberg, Jeffrey G.; Mawst, Luke J.; Kuech, Thomas F.
Publisher
American Institute of Physics Inc
Citation
The following article appeared in Moran, P.D., Hansen, D.M., Matyi, R.J., Cederberg, J.G., Mawst, L.J., & Kuech, T.F. (1999). In Ga As Heteroepitaxy On Ga As Compliant Substrates: X Ray Diffraction Evidence Of Enhanced Relaxation And Improved Structural Quality. Applied Physics Letters, 75(11), 1559-1561. and may be found at http://link.aip.org/link/?apl/75/1559
Date
1999
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http://www.aip.org; http://apl.aip.org/
Description
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
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http://digital.library.wisc.edu/1793/11088 
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