InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality

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Author(s): Moran, Peter D.; Hansen, Darren Michael; Matyi, Richard J.; Cederberg, Jeffrey G.; Mawst, Luke J.; Kuech, Thomas F.
Publisher: American Institute of Physics Inc
Citation: The following article appeared in Moran, P.D., Hansen, D.M., Matyi, R.J., Cederberg, J.G., Mawst, L.J., & Kuech, T.F. (1999). In Ga As Heteroepitaxy On Ga As Compliant Substrates: X Ray Diffraction Evidence Of Enhanced Relaxation And Improved Structural Quality. Applied Physics Letters, 75(11), 1559-1561. and may be found at http://link.aip.org/link/?apl/75/1559
Date: 1999
Part of: http://www.aip.org; http://apl.aip.org/
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Permanent link: http://digital.library.wisc.edu/1793/11088
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