About This Item

Ask the MINDS@UW Librarian

Low-temperature sensitive, compressively strained InGaAsP active (λ = 0.78-0.85 µm) region diode lasers

Show full item record

File(s):

Author(s)
Tansu, Nelson; Zhou, Delai; Mawst, Luke J.
Publisher
Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, USA
Citation
Tansu, N., Zhou, D., & Mawst, L.J. (2000). Low Temperature Sensitive, Compressively Strained In Ga As P Active (Λ = 0.78 0.85 µm) Region Diode Lasers. Ieee Photonics Technology Letters, 12(6), 603-605.
Date
2000
Part of
http://www.ieee.org/; http://ieeexplore.ieee.org/servlet/opac?punumber=68
Description
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
Permanent link
http://digital.library.wisc.edu/1793/11086 
Export
Export to RefWorks 

Part of

Show full item record

Search and browse




About MINDS@UW

Deposit materials

  1. Register to deposit in MINDS@UW
  2. Need deposit privileges? Contact us.
  3. Already registered? Have deposit privileges? Deposit materials.