Low-temperature sensitive, compressively strained InGaAsP active (λ = 0.78-0.85 µm) region diode lasers
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- Author(s)
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Tansu, Nelson; Zhou, Delai; Mawst, Luke J.
- Publisher
- Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, USA
- Citation
- Tansu, N., Zhou, D., & Mawst, L.J. (2000). Low Temperature Sensitive, Compressively Strained In Ga As P Active (Λ = 0.78 0.85 µm) Region Diode Lasers. Ieee Photonics Technology Letters, 12(6), 603-605.
- Date
- 2000
- Part of
- http://www.ieee.org/; http://ieeexplore.ieee.org/servlet/opac?punumber=68
- Description
- This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
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http://digital.library.wisc.edu/1793/11086
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