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Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ > 1.17 μm) quantum-well lasers

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Author(s)
Tansu, Nelson; Chang, Ying-Lan; Takeuchi, Tetsuya; Bour, David P.; Corzine, Scott W.; Tan, Michael R.T.; Mawst, Luke J.
Publisher
Institute of Electrical and Electronics Engineers Inc
Citation
Tansu, N., Chang, Y.L., Takeuchi, T., Bour, D. P., Corzine, S. W., Tan, M. R.T., et al. (2002). Temperature Analysis And Characteristics Of Highly Strained In Ga As Ga As P Ga As (Λ > 1.17 ΜM) Quantum Well Lasers. Ieee Journal Of Quantum Electronics, 38(6), 640-651.
Date
2002
Part of
http://www.ieee.org/; http://ieeexplore.ieee.org/servlet/opac?punumber=3
Description
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
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http://digital.library.wisc.edu/1793/11070 
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