About This Item

Ask the MINDS@UW Librarian

Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing

Show full item record

File(s):

Author(s)
Tansu, Nelson; Yeh, Jeng-Ya; Mawst, Luke J.
Publisher
American Institute of Physics Inc
Citation
The following article appeared in Tansu, N., Yeh, J.Y., & Mawst, L. J. (2003). Improved Photoluminescence Of In Ga As N (In)Ga As P Quantum Well By Organometallic Vapor Phase Epitaxy Using Growth Pause Annealing. Applied Physics Letters, 82(18), 3008-3010. and may be found at http://link.aip.org/link/?apl/82/3008
Date
2003
Part of
http://www.aip.org; http://apl.aip.org/
Description
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
Permanent link
http://digital.library.wisc.edu/1793/11058 
Export
Export to RefWorks 
‚Äč

Part of

Show full item record

Search and browse




About MINDS@UW

Deposit materials

  1. Register to deposit in MINDS@UW
  2. Need deposit privileges? Contact us.
  3. Already registered? Have deposit privileges? Deposit materials.