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Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

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dc.contributor.author Khandekar, Anish A. en_US
dc.contributor.author Hawkins, Brian E. en_US
dc.contributor.author Kuech, Thomas F. en_US
dc.contributor.author Yeh, Jeng-Ya en_US
dc.contributor.author Mawst, Luke J. en_US
dc.contributor.author Meyer, Jerry R. en_US
dc.contributor.author Vurgaftman, Igor en_US
dc.contributor.author Tansu, Nelson en_US
dc.date.accessioned 2007-07-13T19:32:55Z
dc.date.available 2007-07-13T19:32:55Z
dc.date.issued 2005 en_US
dc.identifier.citation The following article appeared in Khandekar, A.A., Hawkins, B.E., Kuech, T.F., Yeh, J.Y., Mawst, L.J., Meyer, J.R., et al. (2005). Characteristics Of Ga As N Ga As Sb Type Ii Quantum Wells Grown By Metalorganic Vapor Phase Epitaxy On Ga As Substrates. Journal Of Applied Physics, 98(12), 123525-. and may be found at http://link.aip.org/link/?jap/98/123525 en_US
dc.identifier.uri http://digital.library.wisc.edu/1793/11052
dc.description This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. en_US
dc.description.provenance Made available in DSpace on 2007-07-13T19:32:55Z (GMT). No. of bitstreams: 1 file_1.pdf: 200995 bytes, checksum: cf7e70fadeb800b06d2943118436c078 (MD5) Previous issue date: 2005 en
dc.format.extent 200995 bytes
dc.format.mimetype application/pdf en_US
dc.format.mimetype application/pdf
dc.publisher American Institute of Physics Inc., Melville, NY 11747-4502, United States en_US
dc.relation.ispartof http://www.aip.org en_US
dc.relation.ispartof http://jap.aip.org en_US
dc.rights Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. en_US
dc.title Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates en_US
dc.identifier.doi http://dx.doi.org/10.1063/1.2148620 en_US

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