Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

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Author(s): Khandekar, Anish A.; Hawkins, Brian E.; Kuech, Thomas F.; Yeh, Jeng-Ya; Mawst, Luke J.; Meyer, Jerry R.; Vurgaftman, Igor; Tansu, Nelson
Publisher: American Institute of Physics Inc., Melville, NY 11747-4502, United States
Citation: The following article appeared in Khandekar, A.A., Hawkins, B.E., Kuech, T.F., Yeh, J.Y., Mawst, L.J., Meyer, J.R., et al. (2005). Characteristics Of Ga As N Ga As Sb Type Ii Quantum Wells Grown By Metalorganic Vapor Phase Epitaxy On Ga As Substrates. Journal Of Applied Physics, 98(12), 123525-. and may be found at http://link.aip.org/link/?jap/98/123525
Date: 2005
Part of: http://www.aip.org; http://jap.aip.org
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Permanent link: http://digital.library.wisc.edu/1793/11052
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