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Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

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Author(s)
Khandekar, Anish A.; Hawkins, Brian E.; Kuech, Thomas F.; Yeh, Jeng-Ya; Mawst, Luke J.; Meyer, Jerry R.; Vurgaftman, Igor; Tansu, Nelson
Publisher
American Institute of Physics Inc., Melville, NY 11747-4502, United States
Citation
The following article appeared in Khandekar, A.A., Hawkins, B.E., Kuech, T.F., Yeh, J.Y., Mawst, L.J., Meyer, J.R., et al. (2005). Characteristics Of Ga As N Ga As Sb Type Ii Quantum Wells Grown By Metalorganic Vapor Phase Epitaxy On Ga As Substrates. Journal Of Applied Physics, 98(12), 123525-. and may be found at http://link.aip.org/link/?jap/98/123525
Date
2005
Part of
http://www.aip.org; http://jap.aip.org
Description
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
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http://digital.library.wisc.edu/1793/11052 
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