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Please use this identifier to cite or link to this item:
http://digital.library.wisc.edu/1793/11004
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| Title: | An 18-GHz 300-mW SiGe power HBT |
| Authors: | Ma, Zhenqiang
Jiang, Ningyue
Wang, Guogong
Alterovitz, Samuel A. |
| Issue Date: | 2005 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United States |
| Citation: | Ma, Z., Jiang, N., Wang, G., & Alterovitz, S. A. (2005). An 18 G Hz 300 M W Si Ge Power Hbt. Ieee Electron Device Letters, 26(6), 381-383. |
| Description: | This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. |
| URI: | http://digital.library.wisc.edu/1793/11004 |
| Appears in Collections: | College of Engineering Publications
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| file_1.pdf | | 275Kb | Adobe PDF | http://digital.library.wisc.edu/1793/11005 | View/Open |
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