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Base-region optimization of SiGe HBTs for high-frequency microwave power amplification

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Author(s)
Ma, Zhenqiang; Jiang, Ningyue
Publisher
Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United States
Citation
Ma, Z., & Jiang, N. (2006). Base Region Optimization Of Si Ge Hb Ts For High Frequency Microwave Power Amplification. Ieee Transactions On Electron Devices, 53(4), 875-883.
Date
2006
Part of
http://www.ieee.org/; http://ieeexplore.ieee.org/servlet/opac?punumber=16
Description
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
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http://digital.library.wisc.edu/1793/11000 
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