High peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor deposition

File(s):

Author(s): Mirabedini, Ali R.; Mawst, Luke J.; Botez, Dan; Marsland, Robert A.
Publisher: American Institute of Physics
Citation: The following article appeared in Mirabedini, A.R., Mawst, L.J., Botez, D., & Marsland, R.A. (1997). High Peak Current Density Strained Layer In0.3 Ga0.7 As/Al0.8 Ga0.2 As Resonant Tunneling Diodes Grown By Metal Organic Chemical Vapor Deposition. Applied Physics Letters, 70(21), 2867-9. and may be found at http://link.aip.org/link/?apl/70/2867
Date: 1997
Part of: http://www.aip.org; http://apl.aip.org/
Description: This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
Permanent link: http://digital.library.wisc.edu/1793/10958
Export: Export to RefWorks