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X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN

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Author(s)
Kim, Jong Kyu; Lee, Jong-Lam; Rickert, Kimberly Anne; Ellis, Arthur B.; Himpsel, Franz J.; Dwikusuma, Fransiska; Kuech, Thomas F.
Publisher
American Institute of Physics Inc
Citation
The following article appeared in Jong, K. Kyu, L.J.L., Rickert, K.A., Ellis, A.B., Himpsel, F.J., Dwikusuma, F., et al. (2002). X Ray Photoemission Determination Of The Schottky Barrier Height Of Metal Contacts To N Ga N And P Ga N. Journal Of Applied Physics, 92(11), 6671-6678. and may be found at http://link.aip.org/link/?jap/92/6671
Date
2002
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http://www.aip.org; http://jap.aip.org
Description
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
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