SiGe relaxation on silicon-on-insulator substrates: an experimental and modeling study
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- Author(s)
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Rehder, Eric M.; Inoki, Carlos Kazuo; Kuan, Tung-Sheng; Kuech, Thomas F.
- Publisher
- American Institute of Physics
- Citation
- The following article appeared in Rehder, E.M., Inoki, C.K., Kuan, T.S., & Kuech, T.F. (2003). Si Ge Relaxation On Silicon On Insulator Substrates: An Experimental And Modeling Study. Journal Of Applied Physics, 94(12), 7892-903. and may be found at http://link.aip.org/link/?jap/94/7892
- Date
- 2003
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- http://www.aip.org; http://jap.aip.org
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- This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
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http://digital.library.wisc.edu/1793/10600
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