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SiGe relaxation on silicon-on-insulator substrates: an experimental and modeling study

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Author(s)
Rehder, Eric M.; Inoki, Carlos Kazuo; Kuan, Tung-Sheng; Kuech, Thomas F.
Publisher
American Institute of Physics
Citation
The following article appeared in Rehder, E.M., Inoki, C.K., Kuan, T.S., & Kuech, T.F. (2003). Si Ge Relaxation On Silicon On Insulator Substrates: An Experimental And Modeling Study. Journal Of Applied Physics, 94(12), 7892-903. and may be found at http://link.aip.org/link/?jap/94/7892
Date
2003
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http://www.aip.org; http://jap.aip.org
Description
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
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http://digital.library.wisc.edu/1793/10600 
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