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X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism

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dc.contributor.author Dwikusuma, Fransiska en_US
dc.contributor.author Kuech, Thomas F. en_US
dc.date.accessioned 2007-07-13T19:29:29Z
dc.date.available 2007-07-13T19:29:29Z
dc.date.issued 2003 en_US
dc.identifier.citation The following article appeared in Dwikusuma, F., & Kuech, T.F. (2003). X Ray Photoelectron Spectroscopic Study On Sapphire Nitridation For Ga N Growth By Hydride Vapor Phase Epitaxy: Nitridation Mechanism. Journal Of Applied Physics, 94(9), 5656-5664. and may be found at http://link.aip.org/link/?jap/94/5656 en_US
dc.identifier.uri http://digital.library.wisc.edu/1793/10598
dc.description This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. en_US
dc.description.provenance Made available in DSpace on 2007-07-13T19:29:29Z (GMT). No. of bitstreams: 1 file_1.pdf: 351429 bytes, checksum: c505717567693cd57544fc96214d1d1b (MD5) Previous issue date: 2003 en
dc.format.extent 351429 bytes
dc.format.mimetype application/pdf en_US
dc.format.mimetype application/pdf
dc.publisher American Institute of Physics Inc en_US
dc.relation.ispartof http://www.aip.org en_US
dc.relation.ispartof http://jap.aip.org en_US
dc.rights Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. en_US
dc.title X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism en_US
dc.identifier.doi http://dx.doi.org/10.1063/1.1618357 en_US

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