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X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism

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Author(s)
Dwikusuma, Fransiska; Kuech, Thomas F.
Publisher
American Institute of Physics Inc
Citation
The following article appeared in Dwikusuma, F., & Kuech, T.F. (2003). X Ray Photoelectron Spectroscopic Study On Sapphire Nitridation For Ga N Growth By Hydride Vapor Phase Epitaxy: Nitridation Mechanism. Journal Of Applied Physics, 94(9), 5656-5664. and may be found at http://link.aip.org/link/?jap/94/5656
Date
2003
Part of
http://www.aip.org; http://jap.aip.org
Description
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
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http://digital.library.wisc.edu/1793/10598 
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