Plasma-parameter dependence of thin-oxide damage from wafer charging during electron-cyclotron-resonance plasma processing
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- Author(s)
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Friedmann, James B.; Shohet, J. Leon; Mau, Robert; Hershkowitz, Noah; Bisgaard, Soren; Ma, Shawming; McVittie, James P.
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- Friedmann, J.B., Shohet, J.L., Mau, R., Hershkowitz, N., Bisgaard, S., Ma, S.M., et al. (1997). Plasma Parameter Dependence Of Thin Oxide Damage From Wafer Charging During Electron Cyclotron Resonance Plasma Processing. Ieee Transactions On Semiconductor Manufacturing, 10(1), 154-166.
- Date
- 1997
- Part of
- http://www.ieee.org/; http://ieeexplore.ieee.org/servlet/opac?punumber=66
- Description
- This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
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http://digital.library.wisc.edu/1793/10408
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