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Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing

Tansu, Nelson; Yeh, Jeng-Ya; Mawst, Luke J. (American Institute of Physics Inc; 2003)
InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality

Moran, Peter D.; Hansen, Darren Michael; Matyi, Richard J.; Cederberg, Jeffrey G.; Mawst, Luke J.; Kuech, Thomas F. (American Institute of Physics Inc; 1999)
Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

Bhattacharya, Arnab; Mawst, Luke J.; Nayak, Sabyasachi; Li, Jiaying; Kuech, Thomas F. (American Inst of Physics, Woodbury, NY, USA; 1996)
Long wavelength emission of InGaAsNGaAsSb type II "w" quantum wells

Yeh, Jeng-Ya; Mawst, Luke J.; Khandekar, Anish A.; Kuech, Thomas F.; Vurgaftman, Igor; Meyer, Jerry R.; Tansu, Nelson (American Institute of Physics Inc., Melville, NY 11747-4502, United States; 2006)
Low-temperature sensitive, compressively strained InGaAsP active (λ = 0.78-0.85 µm) region diode lasers

Tansu, Nelson; Zhou, Delai; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, USA; 2000)
Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

Tansu, Nelson; Kirsch, Nicholas J.; Mawst, Luke J. (American Institute of Physics; 30)
Low-threshold strain-compensated InGaAs(N) (λ = 1.19-1.31 μm) quantum-well lasers

Tansu, Nelson; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc; 2002)
Modal characteristics of ARROW-type vertical-cavity surface-emitting lasers

Lee, Tae-Woo; Hagness, Susan C.; Zhou, Delai; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc; 2001)
Modal properties of two-dimensional antiguided vertical-cavity surface-emitting laser arrays

Zhou, Delai; Dai, Zheng; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc; 2002)
Near-diffraction-limited coherent emission from large aperture antiguided vertical-cavity surface-emitting laser arrays

Bao, Ling; Kim, Nam-Heon; Mawst, Luke J.; Elkin, Nikolay N.; Troshchieva, Vera N.; Vysotsky, Dmitry V.; Napartovich, Anatolii P. (American Institute of Physics Inc; 2004)
Phase-locked laser arrays revisited

Botez, Dan; Mawst, Luke J. (IEEE; 1996)
The role of hole leakage in 1300-nm InGaAsN quantum-well lasers

Tansu, Nelson; Mawst, Luke J. (American Institute of Physics Inc; 2003)
Simplified-antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers

Zhou, Delai; Mawst, Luke J. (American Institute of Physics Inc; 2000)
Single-frequency, single-spatial-mode ROW-DFB diode laser arrays

Nesnidal, Michael P.; Mawst, Luke J.; Bhattacharya, Arnab; Botez, Dan; DiMarco, L.; Connolly, John C.; Abeles, Joseph H. (IEEE, Piscataway, NJ, USA; 1996)
Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ > 1.17 μm) quantum-well lasers

Tansu, Nelson; Chang, Ying-Lan; Takeuchi, Tetsuya; Bour, David P.; Corzine, Scott W.; Tan, Michael R.T.; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc; 2002)
Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers

Tansu, Nelson; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc; 2002)
Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD

Kim, Nam-Heon; Park, Jong-Hyuk; Mawst, Luke J.; Kuech, Thomas F.; Kanskar, Manoj (Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United States; 2006)
Two-dimensional phase-locked antiguided vertical-cavity surface-emitting laser arrays

Zhou, Delai; Mawst, Luke J. (American Institute of Physics Inc; 2000)
Utilizing antiguided structures in VCSEL-based 2-D active photonic lattices enables single-mode operation with larger apertures

Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc; 2003)

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Showing 20-38 of 38

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