Browsing by Author "Mawst, Luke J."
Now showing items 7-26 of 39
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Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates
Khandekar, Anish A.; Hawkins, Brian E.; Kuech, Thomas F.; Yeh, Jeng-Ya; Mawst, Luke J.; Meyer, Jerry R.; Vurgaftman, Igor; Tansu, Nelson (American Institute of Physics Inc., Melville, NY 11747-4502, United States, 2005) -
Distributed-feedback grating used as a lateral-mode selector in phase-locked antiguided arrays
Nesnidal, Michael P.; Mawst, Luke J.; Botez, Dan (IEEE, Piscataway, NJ, USA, 1997) -
Distributed-feedback grating used as an array-mode selector in resonant antiguided diode laser arrays: Effects of the mirror facet position with respect to the grating
Nesnidal, Michael P.; Mawst, Luke J.; Botez, Dan; Buus, Jens (Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, USA, 1998) -
Experimental test for elastic compliance during growth on glass-bonded compliant substrates
Moran, Peter D.; Hansen, Darren Michael; Matyi, Richard J.; Mawst, Luke J.; Kuech, Thomas F. (American Institute of Physics Inc, 2000) -
Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm
Tansu, Nelson; Yeh, Jeng-Ya; Mawst, Luke J. (American Institute of Physics Inc, 2003) -
High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: effect of substrate misorientation
Mawst, Luke J.; Bhattacharya, Arnab; Nesnidal, Michael P.; Lopez, James; Botez, Dan; Morris, Jeffrey A.; Zory, Peter S. (American Inst of Physics, Woodbury, NY, USA, 1995) -
High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers
Wade, Jerome K.; Mawst, Luke J.; Botez, Dan; Jansen, Mitch; Fang, Fang; Nabiev, Rashit F. (American Inst of Physics, Woodbury, NY, USA, 1997) -
High peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor deposition
Mirabedini, Ali R.; Mawst, Luke J.; Botez, Dan; Marsland, Robert A. (American Institute of Physics, 1997) -
High-performance strain-compensated InGaAs-GaAsP-GaAs (λ = 1.17 μm) quantum-well diode lasers
Tansu, Nelson; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc, 2001) -
High-performance, reliable, 730-nm-emitting Al-free active region diode lasers
Al-Muhanna, Ali; Wade, Jerome K.; Earles, Thomas L.; Lopez, James; Mawst, Luke J. (American Institute of Physics Inc., Woodbury, NY, USA, 1998) -
High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers
Al-Muhanna, Ali; Mawst, Luke J.; Botez, Dan; Garbuzov, Dmitri Z.; Martinelli, Ramon U.; Connolly, John C. (American Institute of Physics, 1998) -
High-power single-mode antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers
Zhou, Delai; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc, 2002) -
High-power single-mode simplified antiresonant reflecting optical waveguide (S-ARROW) distributed feedback semiconductor lasers
Yang, Howard; Nesnidal, Michael P.; Al-Muhanna, Ali; Mawst, Luke J.; Botez, Dan; Vang, Timothy A.; Alvarez, Fernando D.; Johnson, Roosevelt (IEEE, Piscataway, NJ, USA, 1998) -
Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing
Tansu, Nelson; Yeh, Jeng-Ya; Mawst, Luke J. (American Institute of Physics Inc, 2003) -
InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality
Moran, Peter D.; Hansen, Darren Michael; Matyi, Richard J.; Cederberg, Jeffrey G.; Mawst, Luke J.; Kuech, Thomas F. (American Institute of Physics Inc, 1999) -
Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates
Bhattacharya, Arnab; Mawst, Luke J.; Nayak, Sabyasachi; Li, Jiaying; Kuech, Thomas F. (American Inst of Physics, Woodbury, NY, USA, 1996) -
Long wavelength emission of InGaAsNGaAsSb type II "w" quantum wells
Yeh, Jeng-Ya; Mawst, Luke J.; Khandekar, Anish A.; Kuech, Thomas F.; Vurgaftman, Igor; Meyer, Jerry R.; Tansu, Nelson (American Institute of Physics Inc., Melville, NY 11747-4502, United States, 2006) -
Low-temperature sensitive, compressively strained InGaAsP active (λ = 0.78-0.85 µm) region diode lasers
Tansu, Nelson; Zhou, Delai; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, USA, 2000) -
Low-threshold strain-compensated InGaAs(N) (λ = 1.19-1.31 μm) quantum-well lasers
Tansu, Nelson; Mawst, Luke J. (Institute of Electrical and Electronics Engineers Inc, 2002) -
Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
Tansu, Nelson; Kirsch, Nicholas J.; Mawst, Luke J. (American Institute of Physics, 30)